Isotropic atomic layer etching of GaN using SF₆ plasma and Al(CH₃)₃

GaN is an enabling material for light emitting diodes, advanced radio frequency, and power semiconductor devices. However, fabrication of GaN devices often relies on harsh etch processes, which can leave an etch damage layer, limiting final device performance. In this work, an isotropic atomic layer etching (ALE) process involving SF6 plasma and trimethylaluminium [Al(CH3)(3)] is presented for the controlled etching of GaN, which reduces oxygen and carbon contamination while smoothing the surface. The ALE chemistry was first examined with density functional theory. A comparison between proposed thermal and plasma-driven reactions is made by implementing NatarajanElliott analysis, highlighting that the plasma process is a good candidate for GaN ALE. Saturation was experimentally confirmed for both ALE half-cycles at 150 and 300 degrees C, with etch rates of 0.31 +/- 0.01 and 0.40 +/- 0.02 nm/cycle, respectively. Analysis of the films post-ALE shows that the RMS roughness of the films decreases from 2.6 +/- 0.1 to 1.9 +/- 0.1 nm after 25 nm of etching at 300 degrees C, in agreement with a previously developed curvature-dependent smoothing model. Taken together, this ALE process enables accurate GaN thickness tuning, surface cleaning, and surface smoothing, allowing for further development of GaN devices.