Local optical analysis of InGaN/GaN nanorod LED structures grown on Si(111)
JOURNAL OF APPLIED PHYSICS(2023)
摘要
Site- and polarity-controlled core-shell InGaN/GaN nanorod LED structures were grown by metal organic vapor phase epitaxy on Si(111). Scanning transmission electron microscope images reveal uniform multiple quantum wells on polarization-free sidewalls. Spatially resolved photoluminescence mapping on a single nanorod demonstrates that the emission at 3.0 eV stems from the polarization-free m-plane, which is supported by a fast recombination lifetime of similar to 490 ps at low temperatures. Quasi-resonant laser excitation demonstrates predominant radiative recombination at low excitation densities, whereas at high excitation densities, the efficiency is lowered by Auger recombination and/or carrier leakage. (c) 2023 Author(s).
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关键词
ingan/gan nanorod led structures,local optical analysis
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