16 x 16 Solar-Blind UV Detector Based on -Ga₂O₃ Sensors

this work, a 16 x 16 Ga2O3 photodetector array is introduced. The Ga2O3 thin film was deposited on c-sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of 8 x 10(3) indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W-1, specific detectivity of 2.2 x 10(14) cm root Hz W-1 (Jones), external quantum efficiency of 3 x 10(4)%, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.