Abrupt Te doping of GaInP grown by molecular beam epitaxy for solar cell applications

We report abrupt Te doping of GaInP solar cells grown by molecular beam epitaxy (MBE) through the use of a low substrate temperature of 420 degrees C and subsequent elimination of surface segregation. First, a Te surface pre-dose layer and reduced substrate temperature were required to achieve abrupt profiles at doping >1 x 10(18) cm(-3) in calibration samples, while reduced doping of 5.7 x 10(17) cm(-3) did not require the surface layer. Next, we demonstrate front-junction n(+)/p GaInP cells with an improved internal quantum efficiency (IQE) after Te doping of the n-type emitter directly attributable to an similar to 2.5x higher carrier diffusion length, with IQE-derived short-circuit current density increasing from 13.2 to 14.1 mA/cm(2). Rapid thermal annealing further boosted the performance through improvements in the minority carrier lifetime of the p-GaInP base. The use of low substrate temperature in MBE-grown GaInP enables abrupt Te doping profiles to be attained in a straightforward manner and is promising for both solar cells and tunnel junctions.