SiGe-based Nanowire HBT for THz Applications

This paper proposes a novel 3D nanowire (NW) based SiGe HBT for the first time. The overall purpose is to estimate the RF performance of an NW device based on the state-of-the-art B55 technology from STMicroelectronics. The challenges associated with the device fabrication and corresponding solutions are briefed. The proposed NW-HBT array predicts an f(MAX) (> 900 GHz) that is more than twice of that obtainable from the corresponding bulk SiGe HBT.