Radio Frequency Performance of High Mobility 2D Monolayer Au₂S-based Transistors

In this paper, we propose a novel two-dimensional (2D) monolayer Au2S radio-frequency (RF) transistor that promises a significantly high effective mobility value. The RF performance of monolayer Au2S-based transistors is evaluated against conventional 2D monolayer MoS2 RF transistors using circuit-level simulations. The intrinsic material-to-device electrical characteristics are obtained from ab initio linearized Boltzmann and quantum transport simulations, while the external parasitics of a RF test structure are extracted by calibrating the circuit model with the experimentally reported RF MoS2 transistors. We show that Au2S RF transistors have similar to 3x higher intrinsic and similar to 2.7x higher extrinsic short-circuit current gain cutoff frequencies than the MoS2 RF transistors.