Investigation of Self-Heating Effect in Forksheet FETs for Sub-3-nm Node

Self-heating effect (SHE) in silicon forksheet field-effect transistors (FSFETs) and nanosheet FETs (NSFETs) for sub-3-nm node was analyzed using calibrated TCAD. For SHE investigation, electrical and thermal properties, and reliability were assessed according to channel width (WCH). A silicon-nitride wall deteriorated the thermal properties of FSFETs; however, FSFETs were electrically superior to NSFETs. Furthermore, as WCH decreases, FSFETs exhibited lower lattice temperature and more improved reliability than NSFETs. Therefore, these quantitative comparisons revealed FSFETs surpassed NSFETs in terms of SHE.