Performance Improvement of ZnO based ReRAM with SiCN oxygen reservoir
2023 7TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM（2023）
Abstract
In this paper, a new structure of ZnO based ReRAM with SiCN capping layer is suggested as oxygen reservoir to improve the device performances. The fabricated devices show lower set/reset voltage and stable current, compared to the device without SiCN layer. XRD spectrum show it not a crystallization effect. Based on the XPS analysis results, SiCN layer seems to be a great oxygen blocking layer preventing the metal electrode from bonding with oxygen ion.
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Key words
SiCN, Oxygen reservoir, porous, ReRAM, RRAM
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