InGaN monolithic full-color light-emitting diode developed by selective removal of active layers in a single p-n junction

We demonstrate a monolithic InGaN light-emitting diode (LED) that emits red, green, and blue (RGB) light. The proposed LED has a simple structure with stacking RGB light-emitting layers on n-GaN, wherein unnecessary layers were removed based on the desired emission color and stacking p-GaN layer. The electroluminescence characteristics of the LED indicated that the peak wavelengths at 20 mA are R: 632.9 nm, G: 519.0 nm, and B: 449.5 nm, and the external quantum efficiencies are R: 0.28%, G: 8.3%, and B: 0.84%. This structure can be manufactured using only semiconductor processes, thus rendering smaller and higher-resolution microdisplays possible.