Resistive Switching Behavior Employing the Ipomoea carnea Plant for Biodegradable Rewritable Read-Only Memory Applications

Development of biocompatible and biodegradable informationstoragecould be one of the major strides toward the advancement of the next-generationeco-friendly electronics. Locally available leaves of Ipomoea carnea (IC) are employed to design a nonvolatileresistive memory device having the configuration Au/IC/ITO. The IC-basedmemory device is found to have back-to-back Schottky behavior. Thememory device exhibits a very good ON/OFF ratio (& SIM;10(2)), device yield (78%), reproducibility (& AP;32 cycles), and goodphysical stability (>360 days). Upon UV irradiation, the deviceperformanceimproves in terms of a higher device yield (82%) and a larger memorywindow (10(4)). Space charge-limited conduction, Schottkyemission (SE), and metallic filament formation were the key behindthe conduction mechanism for such observed switching behavior. Atomicforce microscopy measurements have also been carried out in orderto visualize the conduction filament in the IC-based resistive device.Temperature-dependent investigations confirmed that the gold filamentand oxygen vacancy filament play an important role in the conductionmechanism. Based on the I-V characteristics as well as the data storage nature, it has beenproposed that IC-based switching devices may be utilized to designrewritable read-only memory devices. This is an improvement of conventionalwrite-once-read-many memory.