CMOS Device Scaling by Nanosheet Channel Architectures and New Channel Materials

2023 SILICON NANOELECTRONICS WORKSHOP, SNW（2023）

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摘要

CMOS device scaling by nanosheet is started. Nanosheet architecture evolutions (nanosheet, forksheet and complementary FET (CFET)) with new channel materials (Si, high mobility materials and atomic channel) will drive future CMOS device scaling.

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