Investigation of HfO₂/ZrO₂ Superlattice Dielectric and High-k AlON Interfacial Layer on Ferroelectric FinFET

In this study, we fabricated 12 nmthick Hf0.5Zr0.5O2 (HZO)/HfO2-ZrO2 superlattice (SL-HZO) ferroelectric FinFET (Fe-FinFET) with SiO2/AlON interfacial layers (IL) for comparison. Compared to conventional HZO, SL-HZO FeFinFET shows a larger memory window (MW). Meanwhile, the AlON-based device owns lower operation voltage due to a more significant voltage drop across the FE layer. Overall, SL-HZO FeFinFET with AlON IL unleashes the potential of FeFET memory, enabling both low power consumption and a large MW.