Comparative analysis of spontaneous emission factor and its stability of QD laser using Group-III nitrides above room temperature

This paper presents a comparative analysis of spontaneous emission factor and its stability above room temperature of quantum dot laser using Group-III nitrides. Effect of different parameters has been analyzed on the spontaneous emission factor of quantum dot laser using InN, GaN and AlN quantum dot in the active layer of the device structure. To investigate the stability of spontaneous emission factor, rate of change of it has been analyzed with respect to the different parameters. Parameters considered in this research are: wavelength, energy band-gap and carrier concentration at conduction band. Numerical analysis has been carried out through mathematical modeling and using MATLAB. It was ascertained by comparative analysis that AlN based quantum dot laser possess the lowest value of spontaneous emission factor with respect to wavelength and band-gap energy and the rate of change of spontaneous emission factor with respect to these two parameters has also been the lowest. Besides, AlN quantum dot laser possess the highest value of spontaneous emission factor with respect to carrier concentration at conduction band and the rate of change of spontaneous emission factor with respect to spontaneous emission factor is also the highest. GaN quantum dot laser possess the highest value of spontaneous emission factor with respect to wavelength and band-gap energy and the rate of change of spontaneous emission factor with respect to these two parameters has also been the highest. GaN quantum dot laser possess very high value of spontaneous emission factor with respect to carrier concentration at conduction band and the rate of change of spontaneous emission factor with respect to spontaneous emission factor is moderate, which lies between the highest and the lowest value. InN quantum dot laser possess moderate value of spontaneous emission factor with respect to wavelength and band-gap energy and the rate of change of spontaneous emission factor with respect to these two parameters has also been moderate. InN quantum dot laser possess the lowest value of spontaneous emission factor with respect to carrier concentration at conduction band and the rate of change of spontaneous emission factor with respect to spontaneous emission factor is also the lowest.