Gate-Controlled Charge Rectification in Elemental Tellurium

Chiral conductors exhibit spin-related charge rectification but its controllability is still limited. In this contribution, we report gate-controlled enhancement of charge rectification in chiral semiconductor Te under magnetic field. As gating shifts the chemical potential to the valence band maximum of Te, the charge rectification efficiency is enhanced hundredfold. By combining model calculations, we attribute the charge rectification to the asymmetry of the chiral band structure which is caused by the Zeeman effect. We also find that the carrier density subject to this asymmetry is increased by a camel-back structure near the valence band maximum, which further enhances the gate-controlled charge rectification.