Atomically thin PdS 2 : physical characteristics and electronic device applications

This paper details the fabrication and characterization of field-effect transistors (FETs) and photodetector devices based on few-layered palladium disulfide (PdS 2 ) films. PdS 2 is an emerging member of the transition metal dichalcogenide family that has not been extensively studied. In this study, we evaluated various characteristics of PdS 2 by fabricating FET devices and measured the contact resistance using the transmission line method to be 114 MΩ ∙ μm. We evaluated the electron transport properties of the fabricated FETs to confirm their n-type behavior and measured their capacitance–voltage ( C–V ) curves. The field-effect mobility of the few-layered PdS 2 FETs fabricated through transmission line patterning was investigated at room temperature (300 K) and found to be 2.85 cm 2 V −1 s −1 .