Investigation of Synergic Hydrogen Mitigation Technique for Top-Gate A-IGZO Thin-Film Transistors

In this work, a simple hydrogen mitigation method for the top-gate amorphous In-Ga-Zn-O thin-film transistor (a-IGZO TFT) is proposed. The influences of synergic modulations between post-dielectric thermal treatment and Al2O3 buffer layer acting as oxygen-blockers are investigated to address hydrogen issues. Using the proposed optimization approach, the self-aligned channel annealing is successfully performed to realize $\gt104x$ increase in on-current of a-IGZO TFTs. These results provide useful guidance for high-performance a-IGZO devices in monolithic three-dimensional integration.