Investigation of Electrical Characteristics on Morphotropic Phase Boundary of Hf1-xZrxO2 for Dynamic Random Access Memories

This paper investigates the properties of different Zr compositions in $\mathrm{H}\mathrm{f}_{1-\mathrm{x}}\mathrm{Z}\mathrm{r}_{\mathrm{x}}\mathrm{O}_{2}$ films. Due to the morphotropic phase boundary (MPB) between the orthorhombic ferroelectric phase and the tetragonal anti-ferroelectric phase, a maximum $\kappa$ value of 55 was obtained for 9 nm $\mathrm{H}\mathrm{f}_{0.4}\mathrm{Z}\mathrm{r}_{0.6}\mathrm{O}_{2}$ films. Furthermore, the sufficiently low leakage current of the capacitors was confirmed. Finally, a promising switching endurance of up to $5\times 10^{9}$ cycles was also performed, which becomes one of the driving forces for next-generation dynamic random access memories (DRAM) cell capacitor dielectric materials.