20nmノード技術による7MB/s 64Gb 3ビット/セル DDR NANDフラッシュメモリ
Kitae Park,Kwon Ohsuk,Yoon Sangyong,Choi Myung‐Hoon,Kim In-Mo,Kim Bo-Geun,Min‐Seok Kim,Yoon-Hee Choi,Shin Seung-Hwan,Song Youngson,Park Joo-Yong,Jae-Eun Lee,Eun Chang-Gyu,Lee Ho-Chul,Kim Hyeong-Jun,Lee Jun-Hee, Kim Jong‐Young,Kweon Tae-Min,Yoon Hyun-Jun,Kim Taehyun,Shim Dong-Kyo,Sel Jongsun,Shin Ji-Yeon,Kwak Pansuk,Han Jin-Man,Kim Keon-Soo,Lee Sung-Soo,Young-Ho Lim, T Jung International Solid-State Circuits Conference（2011）
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