Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2
Semiconductor Science and Technology(2020)
Abstract
Abstract Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO 2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau–Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.
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Key words
polycrystalline ferroelectric hfzro<sub>2</sub>,random polarization distribution,multi-domain
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