Large‐Area Black Phosphorus/PtSe₂ Schottky Junction for High Operating Temperature Broadband Photodetectors (Small 28/2023)

Broadband Photodetectors In article number 2206590, Zemin Zhang, Junru Wang, Qingliang Feng, and co-workers present large-area Schottky junction of BP/PtSe2 films-based nano-device arrays towards high operating temperature broadband photodetection from 532 to 2200 nm at 470 K via a depletion enhanced photocarrier dynamics strategy. The photodetectors show a state-of-the-art operating temperature up to 470 K with the photo-responsivity and specific detectivity of 25 A W−1 and 6.4 × 1011 Jones under 1850 nm illumination.