High On-Current 2D nFET of 390 μA/μm at VDS = 1V using Monolayer CVD MoS2 without Intentional Doping
2020 IEEE Symposium on VLSI Technology(2020)
Abstract
We demonstrate the highest nFET current of 390 μA/μ m at V
DS
= 1 V based on CVD Mos
2
mono layers without intentional doping. The transistor exhibits good subthreshold swing of 109 m V/ decade, large ION/IOFF ratio of 4 × 10
8
, and nearly zero DIBL. The high on-current achieved in monolayer Mos
2
nFET is mainly attributed to the thin EOT ~2 nm of HfO
x
gate oxide, short gate length of 100 nm, and low contact resistance ~1.1 kω- μm.
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Key words
HfOx gate oxide,chemical vapour deposition,ON-OFF ratio,contact resistance,nFET current,MoS2 monolayers,CVD,intentional doping,voltage 1.0 V,size 100.0 nm,HfOx,MoS2
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