IR Photoluminescence of Silicon Irradiated with High-Energy Xe Ions after Annealing

The photoluminescence of high resistivity silicon irradiated with swift heavy xenon ions (167 MeV) is studied. In addition to the well-known X, W, W ^' , and C lines, a broad band in the photoluminescence spectra is observed in the range of 1.3–1.5 μ m at low temperatures. As the irradiation dose increases in the range of 5× 10^10-10^13 cm ^-2 , the intensity decreases and the photoluminescence bands narrow with a simultaneous shift of the maximum to the long wavelength range. The photoluminescence spectra change during subsequent annealings at temperatures of 400, 500, and 600 ^∘ C, which is associated with the transformation of the structure of defects in silicon. The temperature dependence of photoluminescence in the range from 10 to 170 K is studied for samples after irradiation with various doses and annealings.