High-Performance Field-Effect Transistor Fabricated on CVD-Grown MoS 2 Monolayers with Indium Contacts

Molybdenum disulfide (MoS 2 ), an emerging two-dimensional semiconductor material, has been keenly studied for field-effect transistors (FETs). In this work, we explored the optical and electrical properties of FETs fabricated by MoS 2 flakes grown by chemical vapor deposition (CVD) and transferred to the electrodes through propylene carbonate film. Large-area, high-quality and highly crystalline MoS 2 monolayers up to 58 µm are obtained through CVD. Flakes are characterized by optical microscopy, atomic force microscopy, Raman spectroscopy, and photoluminescence analysis. The back-gated measurements are performed in ambient conditions without any encapsulation of the device. The fabricated device reveals n -type behavior with high field-effect mobility of 32 cm 2 /V s and high current ON/OFF ratio of 10 6 . Good ohmic contact is achieved while using indium as source/drain electrodes. The large sized, highly crystalline flakes of MoS 2 and the fabricated device showing high field-effect mobility and ON/OFF ratio make them potential candidates for high-performance nanoelectronics and optoelectronics devices.