Technology Dependence of Stuck Bits and Single-Event Upsets in 110-, 72-, and 63-Nm SDRAMs
IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2023）
Key words
Radiation effects,SDRAM,Testing,Transistors,Capacitors,Scanning electron microscopy,Protons,Proton irradiation,radiation effects,retention time,single-event effects (SEEs),stuck bits,synchronous dynamic random access memory (SDRAM),technology nodes
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