An Analytical Model to Evaluate Well-Potential Modulation and Bipolar Amplification Effects

An analytical model to evaluate well-potential modulation and the resulting bipolar amplification effects was proposed and integrated into the circuit-level simulation approach in this article. The key point was to produce an equivalent resistance network and current source between n-well and p-well so that well-potential modulation at arbitrary points could be estimated. It was shown that the simulation results reflected the contribution of bipolar amplification effects and the influence of well-contact placement. The simulated cross sections were consistent with those of heavy ion experimental data, highlighting the reasonableness of the proposed model.