Preparation and electrochromic/energy storage properties of vanadium doped tungsten oxide nanowires br

The ionic radius of V element ion, which is in the same group as Nb, is slightly smaller than that of W ion. Doping V element can improve the ion diffusion rate and structural stability of tungsten oxide nanowires. V-doped tungsten oxide nanowire films were prepared by magnetron sputtering and hydrothermal methods. The effects of different V doping levels on the morphology, composition, and electrochromic properties of samples were investigated using field-emission scanning electron microscopy, X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and electrochemical measurement equipment. The results show that the optical properties of samples are improved by appropriate V doping. When the V doping level is 0.1% (atom fraction), the tungsten oxide film exhibits the best electrochromic performance. Factors such as interplanar spacing, strengthening of V-O bonds and oxygen vacancy concentration are key factors affecting the electrochromic performance of tungsten oxide films. This work will provide useful references for the study of V-doped tungsten oxide nanowire structures as electrochromic materials and devices