Surface Morphology and Photoluminescence Spectra of Pseudomorphic {InGaAs/GaAs} Superlattices on GaAs (100), (110), and (111)A Substrates

The production of superlattices with pseudomorphically strained quantum wells (QWs) {In x Ga 1– x As/GaAs} grown by molecular beam epitaxy on GaAs substrates with (100), (110), and (111)A crystallographic surface orientations is reported. The quality of the crystal structure of epitaxial samples is assessed using the atomic force microscopy of their surface. The manifestation of a piezoelectric field in the photoluminescence spectra is reported.