Spin-dependent tunneling in 2D MnBi 2 Te 4 -based magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) with ferromagnetic (FM) and/or antiferromagnetic (AFM) materials have attracted wide interest for their promising application in spintronic devices. Recently, many discovered two-dimensional (2D) magnetic materials offer a flexible platform to design switchable layered FM/AFM MTJs. By using the first-principles quantum transport simulations, we designed the MTJs based on 2D van der Waals layered MnBi _2 Te _4 and studied the spin-dependent electronic and transport properties of the MTJs with the different thickness MnBi _2 Te _4 as well as their FM and AFM configurations. As the increment of MnBi _2 Te _4 layers, our results show that there is a higher spin polarization and the tunnel magnetoresistance (TMR) ratio at the Fermi level correspondingly increases: 100