Effect of Electrode Materials on Nonvolatile Resistive Switching Memory Behaviors of Metal/In 2 S 3 /Mo/Glass Devices

The resistive switching effect is a fascinating physical phenomenon in the development of next-generation nonvolatile memory devices. In this work, the resistive switching memory behaviors of metal/In 2 S 3 /Mo/glass devices have been investigated. We observed that the top electrode materials can affect the resistive switching memory behaviors of such devices. We have also found that the devices represent an outstanding memory behavior with the largest HRS/LRS resistance ratio (storage window) when using Au as the top electrode.