Optical, Electrical, and Crystal Properties of TiO 2 Thin Films Grown by Atomic Layer Deposition on Silicon and Glass Substrates

TiO 2 thin films have been deposited on glass and Si(100) by atomic layer deposition (ALD) technique using tetrakis(diethylamido)titanium(IV) and water vapor as reactants. Thorough investigation of the properties of the TiO 2 /glass and TiO 2 /Si thin films was carried out, varying the deposition temperature in the range from 100°C to 250°C while keeping the number of reaction cycles fixed at 1000. Physical and material property analyses were performed to investigate optical and electrical properties, composition, structure, and morphology. TiO 2 films grown by ALD may represent promising materials for future applications in optoelectronic devices.