A Low-Fabrication-Temperature Erbium-Based Waveguide Amplifier
2022 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE, ACP(2022)
摘要
In recent years, with the continuous development of silicon photonics technology, more and more optoelectronic devices have integrated into silicon- base platform. However, the inter-device transmission and coupling loss is serious, which results in an urgent need for on-chip waveguide amplifiers to compensate for the loss. Erbium silicate is an ideal gain material because of its extremely high Er3+ concentration (1022 cm(-3)). Nevertheless, Erbium silicate must be annealed above 1000 degrees C to activate the Er3+, which would damage other on-chip optoelectronic components. To solve this problem, here, we report a low-fabrication-temperature erbium-based waveguide amplifier. Erbium-ytterbium silicate and Bi2O3 mixed film is used as gain material, which can activate the Er3+ at 600 degrees C annealing condition. The waveguide amplifier was fabricated by lift-off process due to that the mixed film is hard to etch. Finally, 2 dB signal enhancement has been observed at 1550nm. This work shows that the proposed material has great potential for on-chip waveguide amplifier.
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关键词
low-fabricated-temperature, erbium silicate, waveguide amplifier
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