Characterizing and Modelling of the BTI Reliability in IGZO-TFT using Light-assisted I-V Spectroscopy

Z. Wu,A. Chasin,J. Franco,S. Subhechha,H. Dekkers, Y. V. Bhuvaneshwari,A. Belmonte, N. Rassoul,M. J. van Setten, V. Afanas'ev, R. Delhougne, B. Kaczer,G. S. Kar

2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM（2022）

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摘要

The sub-gap Density-of-State (DoS) in IGZO thin-film transistors (TFT) is systematically investigated using a newly developed Light-assisted I-V Spectroscopy (LaIVs). The technique quantifies the sub-gap DoS of pristine IGZO device and how they evolve with the electrical stress. By combining LaIVs with a model of the entire I-V, charge trapping in the gate-dielectric defects and sub-gap DoS changes during Positive Bias Temperature Instability (PBTI) are decoupled. Their time kinetics and voltage acceleration factors are extracted, allowing to project the I-V degradations to any stress time and voltages.

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关键词

BTI reliability,charge trapping,electrical stress,gate-dielectric defects,I-V degradations,IGZO thin-film transistors,IGZO-TFT,InGaZnO/int,LaIV,light-assisted I-V spectroscopy,PBTI,positive bias temperature instability,pristine IGZO device,stress time,sub-gap density-of-state,sub-gap DoS changes,time kinetics,voltage acceleration factors

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