Integration of InGaAs HEMTs with Si CMOS for energy efficient hybrid circuits: Exploring the path for future wireless communication technologies

Integration of InGaAs HEMTs and Si CMOS on large area silicon substrates holds great promise to cater to the needs of beyond 5G technologies owing to the extremely high electron mobility and bandgap engineering of InGaAs material systems and the mature Si platform. We discuss the hybrid integration platform, where InGaAs HEMT layers grown on 200 mm Si substrate are bonded with Si-CMOS wafers using a multi-layer transfer method. Furthermore, to enable the integration of InGaAs HEMTs and Si CMOS on the same Si substrate, we demonstrate high performance InGaAs Schottky HEMTs on the 200 mm Si substrate and assess the suitability of InGaAs HEMT devices for BEOL processing temperatures.