Design, Implementation and Characterization of an Integrated Current Sensing in GaN HEMT Device by Using the Current-Mirroring Technique
EPE（2022）
关键词
Current observer,Current sensor,Device characterization,Double pulse test,Dynamic R-on,Fast fault detection,Gallium Nitride (GaN),HEMT,Measurement,Over-current,protection Power die,Power integrated circuit Test bench Wide bandgap devices
AI 理解论文
溯源树
样例
生成溯源树，研究论文发展脉络
Chat Paper
正在生成论文摘要