Analysis of Gate Current Wafer Level Variability in Advanced FD-SOI MOSFETs
2018 48TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC)（2018）
Key words
FD-SOI,gate leakage current,direct tunneling,WKB approximation,global variability,compact model,MOSFET
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined