A 3.3 V, 8.89 mu A and 5.5 ppm/degrees C CMOS bandgap voltage reference for power telemetry in retinal prosthesis systems

A 3.3 V CMOS bandgap reference (BGR) was presented in this study that utilizes MOS transistors operating in the sub-threshold region. The complexity of the circuit and the dependency of the voltage reference on power supply variations are simultaneously decreased through the use of a new compensation circuit technique. The proposed BGR is simulated using a 0.35 mu m CMOS standard process. Consequently, a 5.53 ppm/degrees C temperature coefficient is obtained in the -40 similar to+125 degrees C temperature range, the maximum power supply rejection ratio is - 62 dB, and a 2.033 mV/V voltage line regulation is achieved for the 2.3 +/- 4.3 V supply voltage. The proposed circuit dissipates a supply current of 8.89 mu A at a 3.3 V supply voltage, and the active area is 112 mu m x 60 mu m.