A Pulsed Voltage Modulator for High-Power GaN Pulsed Power Amplifiers
2022 IEEE MTT-S INTERNATIONAL MICROWAVE WORKSHOP SERIES ON ADVANCED MATERIALS AND PROCESSES FOR RF AND THZ APPLICATIONS, IMWS-AMP（2022）
Abstract
In this paper, a pulsed voltage modulator that provides pulsed drain bias voltage with rapid rising and falling edge for high-power GaN pulsed power amplifiers (PAs) is proposed. The influence of parasitic parameters of pulsed voltage modulator on the pulsed drain bias voltage of high-power GaN pulsed power amplifier is analyzed, and the optimization method of pulsed voltage modulator is discussed. A pulsed voltage modulator for high-power GaN pulsed amplifiers with power level of kW is implemented according to the optimization method.
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Key words
GaN HEMT,voltage modulator,high-power,pulsed power amplifier
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