Nitrogen Doped Graphene Film Synthesis and Characterization

Having a single atom thickness formed by the combination of carbon atoms in a hexagonal mesh, graphene has been one of the most intensely researched areas in recent years. This is especially due to its wide range of uses thanks to its numerous superior properties such as high electrical and thermal conductivity, high light transmittance, high strength and large surface area. Despite these superior properties, graphene's high sheet resistance and lack of energy band gap limit its use in optoelectronic applications. Yet, these disadvantages can be overcome by implementing doping to the graphene structure. However, although the doping selection and synthesis method are very important in the doped graphene synthesis process, the permanence and homogeneity of the doping is even more critical. In this study, the synthesis and characterization of pure and nitrogen-doped graphene were carried out on copper foil using CVD system. Pyridine was used for the synthesis of the doped graphene, as a carbon and nitrogen source. We found out that the use of the CVD technique allows both homogeneous and permanent doping. In addition to pyridine, in the present study, the film thickness was also optimized by providing a low amount of methane gas flow to the CVD system during the synthesis. To enable the characterization of doped films, Raman spectroscopy, Energy Dispersive X-ray spectroscopy and Xray photo electron spectroscopy techniques were used, and the film quality, thickness, homogeneity, doping rate and type were determined.