Physical properties of GaN nanowires with core-shell InGaN/GaN insertions grown by PA-MBE on Si substrate

D. N. Bondarenko,V. O. Gridchin, K. P. Kotlyar, R. R. Reznik, D. A. Kirilenko,A. I. Baranov, A. S. Dragunova, N. V. Kryzhanovskaya, A. A. Maksimova,G. E. Cirlin

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS（2023）

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摘要

An approach to the fabrication of LED structure based on GaN nanowires with thick core-shell InGaN insertions with high indium content is studied. The results of optical measurements demonstrate the photoluminescence from the InGaN insertions in the green spectrum at room temperature. The study of electrical properties shows typical diode dependence. The results can be crucial for the development of light-emitting diodes on Si substrates.

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关键词

GaN, InGaN nanowires, micro light-emitting diodes, plasma-assisted molecular beam epitaxy, thick core-shell InGaN insertions

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