Comparative Analysis of Noise Behavior of Highly Doped Double Pocket Double-Gate and Single-Gate Negative Capacitance FET

This work employs comparative analysis to explore the noise behavior of a single-gate negative capacitance field-effect transistor (SG-NCFET) and highly doped double pocket double-gate negative capacitance FET (HDDP-DG-NCFET). This study examines the voltage noise power spectral density (Svg) and current noise power spectral density (Sid) under the effects of scaling and varying factors such as ferroelectric thickness (Tfe), dielectric material, oxide thickness (Tox), frequency and varying temperatures (200–400 K). The results show that the values of Sid and Svg are better for the HDDP-DG-NCFET than the SG-NCFET device. The study also reveals that generation recombination (G–R) noise of net power spectral densities predominates primarily at lower and medium frequencies, whereas diffusion noise predominates at higher frequencies. Similarly, it is observed that the flicker noise is notable at lower frequencies. In addition, this investigation emphasize on the examination of net Svg with regard to frequency for various ferroelectric thicknesses, which shows that the lowest Svg is achieved at 10 Hz for Tfe = 7 nm as compared to various ferroelectric thicknesses. Finally, the temperature study of the noise performance revealed that, the impact of increased noise is more pronounced at small gate voltages (Vg) and lower temperatures, with G–R noise as the predominating noise component.