High-Yield Synthesis of SiC@SiO₂ Core-Shell Nanowires on Graphite Substrates for Energy Applications

High-purity silicon carbide @ silicon oxide core-shellnanowires(SiC@SiO2 NWs) were prepared on graphite substrates bya thermal evaporation method. Amorphous SiO2 coats withhigh chemical activity were obtained on the surface of silicon powdersby wet oxidation. The effects of the oxidation time of silicon powderson the morphology and productivity of SiC@SiO2 NWs wereinvestigated. The growth of SiC@SiO2 NWs follows the vapor-solidpattern, and the growth mechanism has been elucidated. The resultsshowed that the yield of SiC@SiO2 NWs was enhanced by & SIM;654%with the wet oxidized silicon source compared to the preoxidation.The morphology and thickness of SiO2 coats play an importantrole in the yield and stacking fault (SF) density of SiC@SiO2 NWs. This work provides a feasible and optimal process for the preparationof high-yield SiC@SiO2 NWs. An environmentallyfriendly and sustainable strategy forthe large-scale fabrication of high-purity SiC@SiO2 NWsin industrial environments is provided.