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Offset-Via Anti-fuse by Cu BEOL Process in Advanced CMOS Technologies

Li-Yu Yeh, Chrong-Jung Lin,Ya-Chin King

2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT（2023）

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Abstract
An offset-Via one-time programmable memory anti-fuse cell is proposed and implemented by FinFET CMOS logic process. By forming in thin dielectric layer in an offset-via structure, the cell can switch states under low programming current. Multilevel resistance states can be achieved by compliance current control. Excellent reliability and data stability of this new cell are also demonstrated.
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Key words
advanced CMOS technologies,BEOL process,compliance current control,Cu/el,data stability,dielectric layer,FinFET CMOS logic process,low programming current,multilevel resistance states,offset-via anti-fuse,one-time programmable memory anti-fuse cell
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