16nm FinFET DUV Detector Array in Fully Compatible FinFET Logic Process

A new 16nm FinFET 2T DUV light detector array is successfully fabricated and demonstrated in this paper. Based on the photoelectric effect in floating gate cell design, the new DUV detector features full CMOS process compatibility with non-volatile detected data storage. A brand new analytical model is also developed for resolving the sensitivity variation aroused from different fab-out initial states. With this model, the FinFET detector array can successfully sense the exposed DUV intensity and its distribution precisely.