Design of High-RA STT-MRAM for Future Energy-Efficient In-Memory Computing
2023 INTERNATIONAL VLSI SYMPOSIUM ON TECHNOLOGY, SYSTEMS AND APPLICATIONS, VLSI-TSA/VLSI-DAT（2023）
Key words
cell dimension,coercive magnetic field,future energy-efficient in-memory computing,high cell resistance,high-RA STT-MRAM,low-RA STT-MRAM,memory applications,MgO thickness,MgO/bin,write margin
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