Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems
IEEE Journal of the Electron Devices Society(2023)
摘要
Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of −1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.
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关键词
Electrochemical metallization (ECM),lift-off,memristor,neuromorphic hardware,RRAM,ReRAM,line edge roughness,Kinetic Monte Carlo
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