Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application

G S Kar,Andrea Fantini,Y Y Chen, V Paraschiv,B Govoreanu,Hubert Hody,N Jossart,Hilde Tielens,S Brus,Olivier Richard,T Vandeweyer,D J Wouters,L Altimime, M Jurczak

symposium on vlsi technology（2012）

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摘要

Here for the first time we discuss RRAM cell performance and reliability through process improvement. Excellent post-cycling (106) retention and post-bake retention and endurance have been achieved for the optimized process conditions. The optimized RRAM cells show potential for manufacturability and scalability for high density memory application.

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tin,oxidation,etching,reliability,encapsulation,hafnium

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