A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.
VLSI Technology and Circuits(2023)
Abstract
This paper presents a 3nm 256Mb SRAM in FinFET technology with interleaved triple WL scheme and new array banking architecture for low V
MIN
applications.
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