Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer.

Inspired by techniques designed for 3D integration, a die-to-wafer (D2W) transfer method can enable MX 2 -channel devices in a semiconductor fab for either high-performance CFET or hybrid-integrated CMOS. A Collective D2W(CoD2W) technique was successfully developed to transfer epitaxial single-layer MX 2 from sapphire to 300mm device wafers which facilitates uniform and residue-free “dies”. We report a FEOL semiconductor compatible integration flow used to build back-gated transistors with high device yield and mobility values up to 50 cm ² /Vs on SiO 2 back gate dielectrics.