Co-designed Capacitive Coupling-Immune Sensing Scheme for Indium-Tin-Oxide (ITO) 2T Gain Cell Operating at Positive Voltage Below 2 V.

Co-designing materials, devices, and the operating scheme, we demonstrate a 2T memory gain cell based on ITO, with excellent properties: 1) zero-volt standby with long retention $(\sim 8\mathrm{s}$ extrapolated for 1 fF storage); 2) operating voltage of 1.9 V with sufficient write current for sub-ns write, owing to good ITO mobility (here $\gt20$ cm$^{2} /\mathrm{V}/\mathrm{s}$); 3) write and read schemes with current-sensing that fully recover the potential drop from wordline capacitive coupling, solving a critical challenge of the 2T gain cell architecture.