Temperature-dependent photoluminescence characteristics of 2D vertically oriented MoS2 microsheets grown by magnetron sputtering

2D V-MoS2 microsheets have excellent photoelectric application performances due to their unique growth arrangement. Here, we have grown 2D V-MoS2 microsheets by magnetron sputtering and investigated their optical properties by temperature-dependent (T-dependent) photoluminescence (PL) from 7 to 300 K. At 7 K and 300 K, the direct A and B exciton peaks and the indirect (I) exciton peak can be observed with PL broadening from 2D V-MoS2 microsheets. With the increase of temperature, the A and B exciton peaks have a red-shift, and the full width at half maximum (FWHM) becomes wider, whereas the intensities of the A and B exciton peaks exhibits different behaviors. The intensity of the A exciton peak reduces while the B exciton peak intensity is rising. Moreover, the I exciton peak obtains an obvious split, which is almost independent of temperature. The above phenomena are closely related to the temperature dependence of band structure, exciton transition and radiative recombination processes in 2D V-MoS2 microsheets. Our results enrich the understanding of exciton dynamics in 2D V-MoS2 microsheets and provide valuable information for the development of MoS2-based optoelectronic devices.